2SA2102 datasheet(1/2 Pages) PANASONIC

tên linh kiện	2SA2102

Giải thích chi tiết về linh kiện	Silicon PNP epitaxial planar type

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nhà sản xuất	PANASONIC [Panasonic Semiconductor]

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Power Transistors

1

Publication date: November 2002

SJD00296AED

2SA2102

Silicon PNP epitaxial planar type

Power supply for Audio & Visual equipments

such as TVs and VCRs

Industrial equipments such as DC-DC converters

■ Features

• High-speed switching (t

stg: storage time/tf: fall time is short)

• Low collector-emitter saturation voltage V

CE(sat)

• Superior forward current transfer ratio h

FE linearity

• TO-220D built-in: Excellent package with withstand voltage 5 kV

guaranteed

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C

= 25°C ± 3°C

1.4±0.2

1.6±0.2

0.8±0.1

0.55±0.15

2.54±0.30

5.08±0.50

12

3

2.6±0.1

2.9±0.2

4.6±0.2

φ 3.2±0.1

9.9±0.3

Unit: mm

1: Base

2: Collector

3: Emitter

TO-220D-A1 Package

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

VCEO

IC = −10 mA, IB = 0

−60

V

Collector-base cutoff current (Emitter open)

ICBO

VCB = −60 V, IE = 0

−100

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE

= −60 V, I

B

= 0

−100

µA

Forward current transfer ratio

hFE1

VCE = −4 V, IC = − 0.2 A

60



hFE2

VCE = −4 V, IC = −1 A

80

250



hFE3

VCE

= −4 V, I

C

= −3 A

30



Collector-emitter saturation voltage

VCE(sat)

IC = −3 A, IB = − 0.375 A

− 0.8

V

Transition frequency

fT

VCE = 10 V, IC = − 0.1 A, f = 10 MHz

100

MHz

Turn-on time

ton

IC

= −1 A, Resistance loaded

0.2

µs

Storage time

tstg

IB1 = − 0.1 A, IB2 = 0.1 A

0.4

µs

Fall time

tf

VCC = −50 V

0.1

µs

Internal Connection

B

C

E

Marking Symbol: A2102

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

−60

V

Collector-emitter voltage (Base open)

VCEO

−60

V

Emitter-base voltage (Collector open)

VEBO

−6V

Collector current

IC

−3A

Peak collector current

ICP

−5A

Collector power

TC = 25°CPC

15

W

dissipation

Ta = 25°C2

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

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