2002 Jun 26

2

Philips Semiconductors

Preliminary specification

NPN general purpose transistor

2PD601AW

FEATURES

• High collector current (max. 100 mA)

• Low collector-emitter saturation voltage (max. 500 mV).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

NPN transistor in an SC-70 (SOT323) plastic package.

PNP complement: 2PB709AW.

MARKING

Note

1. * = -: made in Hong Kong.

* = t: made in Malaysia.

PINNING

TYPE NUMBER

2PD601AQW

*6D

2PD601ARW

*6E

2PD601ASW

*6F

PIN

DESCRIPTION

1

base

2

emitter

3

collector

handbook, halfpage

2

3

1

MAM062

3

2

1

Top view

Fig.1

Simplified outline SC-70 (SOT323)

and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. For mounting conditions, see

“Thermal considerations and footprint design for SOT323 in the General Part of Data

Handbook SC18”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

60

V

collector-emitter voltage

open base

−

50

V

emitter-base voltage

open collector

−

6V

collector current (DC)

−

100

mA

peak collector current

−

200

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C