2PB709AW datasheet(3/8 Pages) PHILIPS

3 / 8 page

2002 Jun 26

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistor

2PB709AW

THERMAL CHARACTERISTICS

Note

1. For mounting conditions, see

“Thermal considerations and footprint design for SOT323 in the General Part of Data

Handbook SC18”.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

IE = 0; VCB = −45 V

−−10

IE = 0; VCB = −45 V; Tj = 150 °C

−−5

µA

IEBO

emitter-base cut-off current

IC = 0; VEB = −5V

−−10

hFE

DC current gain

IC = −2 mA; VCE = −10 V

2PB709AQW

160

260

2PB709ARW

210

340

2PB709ASW

290

460

VCEsat

collector-emitter saturation voltage

IC = −100 mA; IB = −10 mA;

note 1

−−500

collector capacitance

IE =ie = 0; VCB = −10 V;

f = 1 MHz

−

5pF

transition frequency

IC = −1 mA; VCE = −10 V;

f = 100 MHz

2PB709AQW

−

MHz

2PB709ARW

−

MHz

2PB709ASW

−

MHz

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