IXSN50N60BD2 datasheet(1/5 Pages) IXYS

tên linh kiện	IXSN50N60BD2

Giải thích chi tiết về linh kiện	Short Circuit SOA Capability Buck & boost configurations

PDF	5 Pages

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nhà sản xuất	IXYS [IXYS Corporation]

Trang chủ	http://www.ixys.com

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Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

BV

CES

I

C

= 3 mA, V

GE = 0 V

600

V

GE(th)

I

C

= 4 mA, V

CE = VGE

48

V

I

CES

V

CE

= 0.8 • V

CES

T

J = 25°C

350

mA

V

GE = 0 V

T

J = 125°C5

mA

I

GES

V

CE

= 0 V, V

GE = ±20 V

±100

nA

V

CE(sat)

I

C

= I

C90, VGE = 15 V

2.2

2.5

V

Features

• International standard package

miniBLOC

• Aluminium nitride isolation

- high power dissipation

• Isolation voltage 3000 V~

• Very high current, fast switching

IGBT & FRED diode

• MOS Gate turn-on

- drive simplicity

• Low collector-to-case capacitance

• Low package inductance (< 10 nH)

- easy to drive and to protect

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Buck converters

Advantages

• Easy to mount with 2 screws

• Space savings

• High power density

98675 (4/18/2000)

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J = 25°C to 150°C

600

V

CGR

T

J = 25°C to 150°C; RGE = 1 MW

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C75

A

I

C90

T

C = 90°C50

A

I

CM

T

C = 25°C, 1 ms

200

A

SSOA

V

GE= 15 V, TVJ = 125°C, RG = 22 W

I

CM = 100

A

(RBSOA) Clamped inductive load, L = 30

mH

@ 0.8 V

CES

t

SC

V

GE = 15 V, VCE = 360 V, TJ = 125°C

10

ms

(SCSOA) R

G = 22 W, non repetitive

P

C

T

C = 25°C

250

W

V

RRM

600

V

I

FAVM

T

C = 70°C; rectangular, d = 50%

60

A

I

FRM

t

P z<10 ms; pulse width limited by TJ

600

A

P

D

T

C = 25°C

150

W

T

J

-40 ... +150

°C

T

JM

150

°C

T

stg

-40 ... +150

°C

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque (M4)

1.5/13 Nm/lb.in.

Weight

30

g

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

HIGH Speed IGBT

with HiPerFRED

Short Circuit SOA Capability

Buck & boost configurations

SOT-227B, miniBLOC

E 153432

2

1

4

3

Preliminary data

...BD2

...BD3

IXSN50N60BD2

1 = Emitter; 2 = Gate

3 = Collector; 4 = Diode cathode

IXSN50N60BD3

1 = Emitter/Diode Cathode; 2 = Gate

3 = Collector; 4 = Diode anode

V

CES

= 600

V

I

C25

=

75

A

V

CEsat) =

2.5

V

t

fi

= 150 ns

IXSN 50N60BD2

IXSN 50N60BD3

IXYS reserves the right to change limits, test conditions, and dimensions.

Số phần tương tự - IXSN50N60BD2

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