LP2317DT2AG datasheet(2/5 Pages) LRC

2 / 5 page

LP2317DT2AG

20V P-Channel (D-S) MOSFET

5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

Drain-Source Breakdown Voltage

(VGS = 0V, ID =-250uA)

Gate Threshold Voltage

(VDS =VGS , ID =-250μA )

Gate Leakage Current

(VDS =0V, VGS =±8V )

Zero Gate Voltage Drain Current

(VDS =-16V, VGS =0V )

On-State Drain Current (Note 3)

(VDS = -5 V, VGS = -4.5 V)

Drain-Source On-Resistance

(VGS = -4.5 V; ID = -7 A)

Drain-Source On-Resistance

(VGS = -2.5 V; ID = -5.6 A)

Diode Forward Voltage (Note 3)

(IS =-2.5 A, VGS =0V)

Forward Transconductance (Note 3)

(VDS = -15 V, ID = -7 A )

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = -10 V, RL

= 1.4 Ω,ID = -7

A,VGEN = -4.5 V,

RGEN = 6 Ω)

Note: 3. Pulse test: PW ≤300us ,duty cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

ID(on)

gfs

-12

126

113

Coss

Crss

(VDS = -10 V,

VGS = -4.5 V,ID

= -7 A)

Dynamic (Note 4)

Qgs

Qgd

td(on)

td(off)

Ciss

1435

(VDS = -15 V,

VGS = 0 V, f = 1

MHz)

VSD

Static

Unit

µA

VGS(th)

Symbol

Min.

IDSS

Typ.

Max.

-1.3

mΩ

±100

-1

-20

-0.4

RDS(ON)

(Note 3)

V(BR)DSS

IGSS

Characteristic

Leshan Radio Company, LTD.

2/5

Rev.D Nov. 2018

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