IXTV280N055TS datasheet(2/5 Pages) IXYS

2 / 5 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTV280N055T

IXTV280N055TS

PLUS220SMD (IXTV_S) Outline

PLUS220 (IXTV) Outline

Terminals:

1 - Gate

2 - Drain

3 - Source

Tab - Drain

Symbol

Test Conditions

Characteristic Values

J = 25° C unless otherwise specified)

Min.

Typ.

Max.

DS= 10 V; ID = 60 A, Note 1

118

iss

9800

oss

GS = 0 V, VDS = 25 V, f = 1 MHz

1450

rss

320

d(on)

GS = 10 V, VDS = 0.5 VDSS, ID = 50 A

d(off)

G = 3.3 Ω (External)

g(on)

200

GS= 10 V, VDS = 0.5 VDSS, ID = 25 A

thJC

0.27

°C/W

thCS

PLUS220

.25

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic

Values

J = 25° C unless otherwise specified)

Min.

Typ.

Max.

GS = 0 V

280

Pulse width limited by T

600

F = 50 A, VGS = 0 V, Note 1

1.0

F = 50 A, -di/dt = 100 A/µs70

R = 25 V, VGS = 0 V

Note 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;

2. On through-hole packages, R

DS(on) Kelvin test contact

location is 5 mm or less from the package body.

PRELIMINARYTECHNICALINFORMATION

The product presented herein is under development. The Technical Specifications

offered are derived from data gathered during objective characterizations of preliminary

engineering lots; but also may yet contain some information supplied during a pre-

production design evaluation. IXYS reserves the right to change limits, test conditions,

and dimensions without notice.

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6771478B2

7,071,537

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