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IXTY12N06T bảng dữ liệu(PDF) 2 Page - IXYS Corporation

tên linh kiện IXTY12N06T
Giải thích chi tiết về linh kiện  N-Channel Enhancement Mode Avalanche Rated
PDF  5 Pages
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nhà sản xuất  IXYS [IXYS Corporation]
Trang chủ  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTY12N06T bảng dữ liệu(HTML) 2 Page - IXYS Corporation

  IXTY12N06T Datasheet HTML 1Page - IXYS Corporation IXTY12N06T Datasheet HTML 2Page - IXYS Corporation IXTY12N06T Datasheet HTML 3Page - IXYS Corporation IXTY12N06T Datasheet HTML 4Page - IXYS Corporation IXTY12N06T Datasheet HTML 5Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTU12N06T
IXTY12N06T
Notes: 1. Pulse test: t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, R
DS(on) Kelvin test contact location must be
5mm or less from the package body.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
TO-251 (IXTU) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
TO-252 (IXTY) Outline
Pins: 1 - Gate
2,4 - Drain
3 - Source
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS = 10V, ID = 0.5 • ID25, Notes 1
2.9
4.7
S
C
iss
256
pF
C
oss
V
GS
= 0V, V
DS = 25V, f = 1MHz
46
pF
C
rss
10.4
pF
t
d(on)
12
ns
t
r
29
ns
t
d(off)
29
ns
t
f
18
ns
Q
g(on)
3.4
nC
Q
gs
V
GS = 10V, VDS = 0.5 • VDSS, ID = 6A
1.0
nC
Q
gd
0.9
nC
R
thJC
4.5
°C/W
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS = 0V
12
A
I
SM
Repetitive, pulse width limited by T
JM
48
A
V
SD
I
F = 6A, VGS = 0V, Note 1
1.2
V
t
rr
30
ns
I
RM
1.34
A
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 6A
R
G = 50Ω (External)
I
F = 6A, VGS = 0V, -di/dt = 100A/μs
V
R = 30V
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
2.19
2.38
.086
.094
A1
0.89
1.14
0.35
.045
b
0.64
0.89
.025
.035
b1
0.76
1.14
.030
.045
b2
5.21
5.46
.205
.215
c
0.46
0.58
.018
.023
c1
0.46
0.58
.018
.023
D
5.97
6.22
.235
.245
E
6.35
6.73
.250
.265
e
2.28
BSC
.090
BSC
e1
4.57
BSC
.180
BSC
H
17.02
17.78
.670
.700
L
8.89
9.65
.350
.380
L1
1.91
2.28
.075
.090
L2
0.89
1.27
.035
.050
1. Gate
2.Drain
3. Source
4. Drain
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19
2.38
0.086
0.094
A1
0.89
1.14
0.035
0.045
A2
0
0.13
0
0.005
b
0.64
0.89
0.025
0.035
b1
0.76
1.14
0.030
0.045
b2
5.21
5.46
0.205
0.215
c
0.46
0.58
0.018
0.023
c1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.32
5.21
0.170
0.205
E
6.35
6.73
0.250
0.265
E1
4.32
5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
L
0.51
1.02
0.020
0.040
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
2.54
2.92
0.100
0.115



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