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IXTP230N04T4 bảng dữ liệu(PDF) 2 Page - IXYS Corporation

tên linh kiện IXTP230N04T4
Giải thích chi tiết về linh kiện  N-Channel Enhancement Mode Avalanche Rated
PDF  6 Pages
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nhà sản xuất  IXYS [IXYS Corporation]
Trang chủ  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP230N04T4 bảng dữ liệu(HTML) 2 Page - IXYS Corporation

  IXTP230N04T4 Datasheet HTML 1Page - IXYS Corporation IXTP230N04T4 Datasheet HTML 2Page - IXYS Corporation IXTP230N04T4 Datasheet HTML 3Page - IXYS Corporation IXTP230N04T4 Datasheet HTML 4Page - IXYS Corporation IXTP230N04T4 Datasheet HTML 5Page - IXYS Corporation IXTP230N04T4 Datasheet HTML 6Page - IXYS Corporation  
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IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTA230N04T4
IXTP230N04T4
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
TO-220 (IXTP) Outline
Pins:
1 - Gate
2 - Drain
3 - Source
TO-263 (IXTA) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.40
0.74
.016
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
8.00
8.89
.280
.320
E
9.65
10.41
.380
.405
E1
6.22
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.13
0
.005
1. Gate
2. Drain
3. Source
4. Drain
Bottom
Side
Symbol
Test Conditions
Characteristic Values
(T
J = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS = 10V, ID = 60A, Note 1
100
170
S
R
Gi
Gate Input Resistance
1.2
C
iss
7400
pF
C
oss
V
GS = 0V, VDS = 25V, f = 1MHz
1115
pF
C
rss
760
pF
t
d(on)
40
ns
t
r
143
ns
t
d(off)
85
ns
t
f
82
ns
Q
g(on)
140
nC
Q
gs
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
35
nC
Q
gd
53
nC
R
thJC
0.44
C/W
R
thCS
TO-220
0.50
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
I
S
V
GS = 0V
230
A
I
SM
Repetitive, Pulse width limited by T
JM
920
A
V
SD
I
F = 100A, VGS = 0V, Note 1
1.4
V
t
rr
32
ns
I
RM
1.6
A
Q
RM
25.6
nC
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • V
DSS, ID = 0.5 • ID25
R
G = 10 (External)
I
F = 115A, VGS = 0V
-di/dt = 100A/
s
V
R = 30V
Notes: 1. Pulse test, t  300s, duty cycle, d  2%.
2. On through-hole packages, R
DS(on) Kelvin test contact location must be 5mm
or less from the package body.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.



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