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ACE11013A bảng dữ liệu(PDF) 1 Page - ACE Technology Co., LTD.

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Giải thích chi tiết về linh kiện  P-Channel Enhancement Mode MOSFET
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ACE11013A
P-Channel Enhancement Mode MOSFET
VER 1.1
1
Description
The ACE11013A is the P-Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching, low in-line power loss and resistance to transients are
needed.
Features
-20V/0.45A,RDS(ON)
= 0.52Ω@V
GS=-4.5V
-20V/0.35A,RDS(ON)
= 0.70Ω@V
GS=-2.5V
-20V/0.25A,RDS(ON)
= 0.95Ω@V
GS=-1.8V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOT-523 package design
Applications
Drivers : Relays/Solenoids/Lamps/Hammers
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (TJ=150℃)
TA=25℃
ID
-0.45
A
TA=80℃
-0.35
Pulsed Drain Current(*)
IDM
-1.0
A
Continuous Source Current(Diode Conduction)
IS
-0.3
A
Power Dissipation
TA=25℃
PD
0.27
A
TA=70℃
0.16
Operating Junction Temperature
TJ
-55~150
OC
Storage Temperature Range
TSTG
-55~150
OC


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