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ACE11013A bảng dữ liệu(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE11013A bảng dữ liệu(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 7 page ![]() ACE11013A P-Channel Enhancement Mode MOSFET VER 1.1 1 Description The ACE11013A is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss and resistance to transients are needed. Features -20V/0.45A,RDS(ON) = 0.52Ω@V GS=-4.5V -20V/0.35A,RDS(ON) = 0.70Ω@V GS=-2.5V -20V/0.25A,RDS(ON) = 0.95Ω@V GS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-523 package design Applications Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ ID -0.45 A TA=80℃ -0.35 Pulsed Drain Current(*) IDM -1.0 A Continuous Source Current(Diode Conduction) IS -0.3 A Power Dissipation TA=25℃ PD 0.27 A TA=70℃ 0.16 Operating Junction Temperature TJ -55~150 OC Storage Temperature Range TSTG -55~150 OC |
Số phần tương tự - ACE11013A |
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Mô tả tương tự - ACE11013A |
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