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US1602L-S08-R bảng dữ liệu(PDF) 7 Page - Unisonic Technologies |
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US1602L-S08-R bảng dữ liệu(HTML) 7 Page - Unisonic Technologies |
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7 / 10 page ![]() US1602 LINEAR INTEGRATED CIRCUIT UNISONICTECHNOLOGIESCO.,LTD 7 of 10 www.unisonic.com.tw QW-R119.021.F FUNCTIONAL DESCRIPTION FIG.6 OLP case FIG.7 OVP case OTP OTP will shut down driver when junction temperature TJ>T(THR) for continual a blanking time. (7) Driver Output Section The driver-stage drives the gate of the MOSFET and is optimized to minimize EMI and to provide high circuit efficiency. This is done by reducing the switch on slope when reaching the MOSFET threshold. This is achieved by a slope control of the rising edge at the driver’s output. The output driver is clamped by an internal 16V Zener diode in order to protect power MOSFET transistors against undesirable gate over voltage. In addition to the gate drive control scheme mentioned, the gate drive strength can also be adjusted externally by a resistor connected between VDD and VDDG, the falling edge of the Drain output can be well controlled. It provides great flexibility for system EMI design. (8) Inside power switch MOS transistor Specific power MOS transistor parameter is as “POWER MOS TRANSISTOR SECTION” in electrical characteristics table. |
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