IXTP140N12T2 datasheet(1/6 Pages) IXYS

tên linh kiện	IXTP140N12T2

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 175C

120

V

DGR

T

J

= 25

C to 175C, R

GS = 1M

120

V

GSS

Continuous

20

V

GSM

Transient

30

V

I

D25

T

C = 25C

140

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

350

A

I

A

T

C = 25C70

A

E

AS

T

C = 25C

1.3

J

P

D

T

C = 25C

577

W

T

J

-55 ... +175

C

T

JM

175

C

T

stg

-55 ... +175

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250A

120

V

GS(th)

V

DS = VGS, ID = 250A

2.5

4.5

V

I

GSS

V

GS =  20V, VDS = 0V

200 nA

I

DSS

V

DS = VDSS, VGS = 0V

10

A

T

J = 150C

500

A

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Notes 1, 2

8

10 m



TrenchT2TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

IXTA140N12T2

IXTP140N12T2

V

DSS

= 120V

I

D25

= 140A

R

DS(on) 

 10m



DS100829A(5/17)

Features

 International Standard Packages

 175°C Operating Temperature

 Avalanche Rated

 Low R

DS(on)

 Fast Intrinsic Rectifier

 High Current Handling Capability

Advantages

 Easy to Mount

 Space Savings

 High Power Density

Applications

 Synchronous Rectification

 DC/DC Converters and Off-Line UPS

 Primary- Side Switch

 High Current Switching Applications

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-263AA (IXTA)

G

D S

TO-220AB (IXTP)

D (Tab)

G

S

D (Tab)

Advance Technical Information

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Inchange Semiconductor ...	IXTP140N12T2	295Kb / 2P	isc N-Channel MOSFET Transistor

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