PUMF11 datasheet(4/8 Pages) PHILIPS

4 / 8 page

2002 Apr 09

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistor;

PNP general purpose transistor

PUMF11

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

TR1 (NPN)

ICBO

collector-base cut-off current

VCB =50V; IE =0

−−

100

ICEO

collector-emitter cut-off current

VCE =30V; IB =0

−−

µA

VCE =30V; IB = 0; Tj = 150 °C

−−

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

0.12

hFE

DC current gain

VCE =5V; IC = 5 mA

−−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−−

150

Vi(off)

input off voltage

VCE =5V; IC = 100 µA

−

0.9

0.5

Vi(on)

input on voltage

VCE = 0.3 V; IC = 2 mA

1.1

−

input resistor

15.4

28.6

Ω

resistor ratio

1.7

2.1

2.6

collector capacitance

VCB =10V; IE =ie = 0; f = 1 MHz

−−

2.5

TR2 (PNP)

ICBO

collector-base cut-off current

VCB = −30 V; IE =0

−−−100 nA

ICEO

collector-emitter cut-off current

VCB = −30 V; IB = 0; Tj = 150 °C

−−−10

µA

IEBO

emitter-base cut-off current

VEB = −4 V; IC =0

−−−100 nA

hFE

DC current gain

VCE = −6 V; IC = −1 mA

120

−−

VCEsat

saturation voltage

IC = −50 mA; IB = −5 mA; note 1

−−−200 mV

collector capacitance

VCB = −12 V; IE =ie = 0; f = 1 MHz

−−

2.2

transition frequency

VCE = −12 V; IC = −2 mA; f = 100 MHz 100

−−

MHz

-------

APPLICATION INFORMATION

handbook, halfpage

RBE(ext)

RB(ext)

MHC182

Fig.3 Typical power management circuit.

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