MRF9200LR3 MRF9200LSR3

5−1

Freescale Semiconductor

Wireless RF Product Device Data

RF Power Field Effect Transistors

N−Channel Enhancement−Mode Lateral MOSFETs

devices make them ideal for large−signal, common−source amplifier applica-

tions in 26 volt base station equipment.

Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. Peak/

Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 17.5 dB

Drain Efficiency — 25%

ACPR @ 750 kHz Offset — −46.5 dBc @ 30 kHz Bandwidth

Output Power

• Characterized with Series Equivalent Large−Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Integrated ESD Protection

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain−Source Voltage

−0.5, +65

Vdc

Gate−Source Voltage

−0.5, +15

Vdc

Derate above 25°C

625

3.6

W

W/°C

Storage Temperature Range

−65 to +150

°C

Operating Junction Temperature

200

°C

CW Operation

Case Temperature 60°C

Case Temperature 80°C

CW

200

160

W

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 60°C, 200 W CW

Case Temperature 80°C, 40 W CW

0.28

0.34

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes − AN1955.

NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF9200L

Rev. 1, 12/2004

Freescale Semiconductor

Technical Data

MRF9200LR3

MRF9200LSR3

880 MHz, 40 W AVG., 26 V

SINGLE N−CDMA

LATERAL N−CHANNEL

RF POWER MOSFETs

CASE 465C−02, STYLE 1

NI−880S

MRF9200LSR3

CASE 465B−03, STYLE 1

NI−880

MRF9200LR3

© Freescale Semiconductor, Inc., 2004. All rights reserved.