IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTT76P10THV IXTA76P10T

IXTP76P10T

IXTH76P10T

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1: Pulse test, t

 300s, duty cycle, d  2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

35

58

S

C

iss

13.7

nF

C

oss

V

890

pF

C

rss

275

pF

t

d(on)

25

ns

t

r

40

ns

t

d(off)

52

ns

t

f

20

ns

Q

g(on)

197

nC

Q

gs

V

65

nC

Q

gd

65

nC

R

thJC

0.42

C/W

R

thCS

TO-220

0.50

C/W

TO-247

0.21

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

- 76

A

I

SM

Repetitive, Pulse Width Limited by T

JM

- 304

A

V

SD

I

-1.3

V

t

rr

70

ns

Q

RM

215



nC

I

RM

- 6

A

Resistive Switching Times

V

R

I

V