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TMUX6119 bảng dữ liệu(PDF) 9 Page - Texas Instruments |
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TMUX6119 bảng dữ liệu(HTML) 9 Page - Texas Instruments |
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9 / 23 page ![]() D VS VD A A ID (OFF) Is (OFF) S V D VS ICH S 9 TMUX6119 www.ti.com SCDS384 – SEPTEMBER 2018 Product Folder Links: TMUX6119 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated 8 Detailed Description 8.1 Overview The TMUX6119 has very low on and off leakage currents and ultra-low charge injection, allowing the device to be used in high precision measurement applications. The device also provides excellent isolation capability by blocking signal levels up to the supplies when the switches are in the OFF position. A low supply current of 17 µA enables usage in portable applications. 8.1.1 On-Resistance The on-resistance of the TMUX6119 is the ohmic resistance across the source (SA or SB) and drain (D) pins of the device. The on-resistance varies with input voltage and supply voltage. The symbol RON is used to denote on-resistance. The measurement setup used to measure RON is shown in Figure 1. Voltage (V) and current (ICH) are measured using this setup, and RON is computed as shown in Equation 1: Figure 1. On-Resistance Measurement Setup RON = V / ICH (1) 8.1.2 Off-Leakage Current There are two types of leakage currents associated with a switch during the off state: 1. Source off-leakage current 2. Drain off-leakage current Source leakage current is defined as the leakage current flowing into or out of the source pin when the switch is off. This current is denoted by the symbol IS(OFF). Drain leakage current is defined as the leakage current flowing into or out of the drain pin when the switch is off. This current is denoted by the symbol ID(OFF). The setup used to measure both off-leakage currents is shown in Figure 2 Figure 2. Off-Leakage Measurement Setup |
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