SIM6800M datasheet(7/52 Pages) SANKEN

7 / 52 page

SIM6800M Series

SIM6800M-DSE Rev.1.5

SANKEN ELECTRIC CO., LTD

Jul. 18, 2018

http://www.sanken-ele.co.jp/en

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Remarks

TSD Operating

Temperature

TDH

135

150

—

°C

TSD Releasing

Temperature

TDL

105

120

—

°C

3.2

Bootstrap Diode Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Remarks

Bootstrap Diode Leakage

Current

ILBD

VR = 500 V

—

μA

Bootstrap Diode Forward

Voltage

VFB

IFB = 0.15 A

—

1.0

1.3

Bootstrap Diode Series

Resistor

RBOOT

3.3

Thermal Resistance Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Remarks

Junction-to-Case Thermal

Resistance

( 1)

Rj-C

All power MOSFETs

operating

—

3.6

°C/W

SIM681xM

R(j-C)Q

( 2)

All IGBTs operating

—

3.6

°C/W

SIM682xM

SIM6880M

R(j-C)F

( 3)

All freewheeling diodes

operating

—

4.2

°C/W

SIM682xM

SIM6880M

Junction-to-Ambient

Thermal Resistance

Rj-A

All power MOSFETs

operating

—

°C/W

SIM681xM

R(j-A)Q

All IGBTs operating

—

°C/W

SIM682xM

SIM6880M

R(j-A)F

All freewheeling diodes

operating

—

°C/W

SIM682xM

SIM6880M

(1) Refers to a case temperature at the measurement point described in Figure 3-1, below.

(2) Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient

thermal characteristics, see Section 15.1.

(3) Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case.

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