2SC4789 datasheet(2/4 Pages) HITACHI

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Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

———————————————————————————————————————————

Collector to emitter breakdown

V(BR)CEO

800

—

IC = 10 mA,

voltage

RBE = ∞

———————————————————————————————————————————

Emitter to base breakdown

V(BR)EBO

6—

—

IE = 10 mA, IC = 0

voltage

———————————————————————————————————————————

Collector cutoff current

ICES

—

500

µA

VCE = 1500 V,

RBE = 0

———————————————————————————————————————————

DC current transfer ratio

hFE

—

VCE = 5 V,

IC = 1 A

———————————————————————————————————————————

Collector to emitter saturation

VCE(sat)

——

IC = 16 A, IB = 4 A

voltage

———————————————————————————————————————————

Base to emitter saturation

VBE(sat)

—

1.5

IC = 16 A, IB = 4 A

voltage

———————————————————————————————————————————

Fall time

—

0.5

µs

ICP = 10 A, IB1 = 2 A

IB2 = –3 A,

fH = 31.5 kHz

———————————————————————————————————————————

Maximum Collector Power Dissipation Curve

200

150

100

150

200

Case Temperature

Tc (°C)

Area of Safe Operation

500

1000

1500

2000

Collector to Emitter Voltage V

(V)

(100 V, 30 A)

(800 V, 4 A)

0.5 mA

2SC4789

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