Preliminary

GaN Hybrid Power Amplifier

RTH35005G

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com

All specifications may change without notice

US Facility : 919-677-8780 / sales@rfhicusa.com

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Version 0.2

Mechanical Specifications

PARAMETER

UNIT

TYP

REMARK

Mass

g

3.0

±1.0

Dimension

mm

20.5 x15 x 4.3

±0.15

Absolute Maximum Ratings

PARAMETER

UNIT

RATING

SYMBOL

Gate-Source Voltage

V

-8 ~ -2

Vgd

Vgc

Vgp

Drain-Source Voltage

V

50

Vds

Gate Current

mA

1.2

Drive

2.1

Carrier

4

Peaking

Operating Junction Temperature

°C

225

Operating Case Temperature

°C

-30 ~ 85

Storage Temperature

°C

-40 ~ 100

Operating Voltages

PARAMETER

UNIT

MIN

TYP

MAX

SYMBOL

Drain Voltage

V

30.5

31

31.5

Vds

Gate Voltage (on-stage)

V

-

Vgd @Drive Idq

-2

Vgd

Gate Voltage (on-stage)

V

-

Vgc @Carrier Idq

-2

Vgc

Gate Voltage (on-stage)

V

-

Vgp

-2

Vgp

Gate Voltage (off-stage)

V

-

-8

-

Vgd

Gate Voltage (off-stage)

V

-

-8

-

Vgc

Gate Voltage (off-stage)

V

-

-8

-

Vgp

Block Diagram