DSB60C30PB

preliminary

V

=

V

Symbol

Definition

Ratings

typ.

max.

I

R

V

I

A

V

F

0.55

R

0.85 K/W

R

min.

30

V

10

T

= 25°C

VJ

T

=

°C

VJ

mA

80

V

=

V

R

T

= 25°C

VJ

I =

A

F

V

T =

°C

C

130

P

tot

145

W

T

= 25°C

C

R

K/W

30

30

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Unit

0.73

T

= 25°C

VJ

100

V

F0

V

0.21

T

=

°C

VJ

150

8.6

mΩ

V

0.49

T

=

°C

VJ

I =

A

F

V

30

0.73

I =

A

F

60

I =

A

F

60

threshold voltage

slope resistance

for power loss calculation only

mA

125

V

30

max. repetitive reverse blocking voltage

T

= 25°C

VJ

C

J

1.26

junction capacitance

V =

V

5

T

= 25°C

f = 1 MHz

R

VJ

nF

I

FSM

t = 10 ms; (50 Hz), sine;

T

= 45°C

VJ

max. forward surge current

V = 0 V

R

T

=

°C

VJ

150

530

A

30

FAV

d =

rectangular

0.5

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Schottky

30

0.50

IXYS reserves the right to change limits, conditions and dimensions.

20131030a

Data according to IEC 60747and per semiconductor unless otherwise specified

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