MML09231HT1

1

RF Device Data

Freescale Semiconductor, Inc.

Enhancement Mode pHEMT

Technology (E--pHEMT)

Low Noise Amplifier

The MML09231H is a single--stage low noise amplifier (LNA) with active

bias and high isolation for use in cellular infrastructure applications. It is

designed for a range of low noise, high linearity applications such as small

cell, tower mounted amplifiers (TMA) and receiver front--end circuits. It

operates from a single voltage supply and is suitable for applications with

frequencies from 700 to 1400 MHz such as ISM, GSM, W--CDMA and LTE.

Features

 Ultra Low Noise Figure: 0.36 dB @ 900 MHz

 Frequency: 700--1400 MHz

 Unconditionally Stable Over Temperature

 High Reverse Isolation: --21 dB @ 900 MHz

 P1dB: 24.5 dBm @ 900 MHz

 Small--Signal Gain: 17.2 dB @ 900 MHz (adjustable externally)

 Third Order Output Intercept Point: 37.4 dBm @ 900 MHz

 Single 5 V Supply

 Power--down Pin

 Supply Current: 55 mA

 50 Ohm Operation (some external matching required)

 Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package

 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

DFN 2  2

700--1400 MHz, 17.2 dB

24.5dBm,0.36dB NF

E--pHEMT LNA

MML09231HT1

Characteristic

Symbol

700

MHz

900

MHz

1400

MHz

Unit

NF

Input Return Loss

(S11)

IRL

--17

--15

--14

dB

Output Return Loss

(S22)

ORL

--14

--15

--15

dB

Small--Signal Gain

(S21)

19

17.2

13.2

dB

Power Output @

1dB Compression

P1dB

24

24.5

24

dBm

Third Order Input

Intercept Point

IIP3

17

20.2

23.8

dBm

Third Order Output

Intercept Point

OIP3

36

37.4

37

dBm

tuned for specified frequency.

2. (a) Noise figure value calculated with connector losses

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

6

V

Supply Current

150

mA

RF Input Power

20

dBm

Storage Temperature Range

--65 to +150

C

Junction Temperature

175

C

Table 3. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 95C, 5 Vdc, 55 mA, no RF applied

77

C/W

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.

Freescale Semiconductor

Technical Data

Document Number: MML09231H

Rev. 1, 9/2014

 Freescale Semiconductor, Inc., 2013--2014. All rights reserved.