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MMDS09254HT1 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors |
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MMDS09254HT1 bảng dữ liệu(HTML) 2 Page - NXP Semiconductors |
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2 / 16 page ![]() 2 RF Device Data Freescale Semiconductor, Inc. MMDS09254HT1 Table 1. Maximum Ratings Rating Symbol Value Unit Supply Voltage VDD 6 V Logic Inputs (SCLK, LCLK, LEN, PUP, SDI) Vin --0.5 to +3.63 V RF Input Power (CW) Pin 25 dBm Storage Temperature Range Tstg --65 to +150 C Junction Temperature TJ 150 C Table 2. Recommended Operating Conditions Characteristic Symbol Min Max Unit Supply Voltage VDD 4.5 5.5 V DC Input Voltage (SCLK, LCLK, LEN, SDI) Vin 0 3.3 V Table 3. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TA =25C, 50 ohm system, in Freescale Application Circuit) Characteristic Symbol Min Typ Max Unit Insertion Loss (Includes 3 dB power division and 2.5 dB loss) IL — 5.5 — dB Max Transition Time (Rising Edge of LCLK to RFout) ttransition — 350 — ns Power Input @ 1dB Compression P1dB — 35 — dBm Supply Current IDD 10 11 12 mA Isolation (S32) |S32| — 25 — dB Input Return Loss (S11) IRL — 15 — dB Output Return Loss (S22, S33) ORL — 15 — dB Third Order Output Intercept Point OIP3 — 45 — dBm Phase Step — 7 — /bit Phase Control Range — 49 — Attenuation Step R — 0.5 — dB/bit Attenuation Control Range R — 7.5 — dB Max Input Voltage Logic Low VIL — — 0.4 V Min Input Voltage Logic High VIH 1.6 — — V SDO Output Voltage High VOH 1.8(1) — 0.6 VDD V SDO Output Voltage Low VOL 0 — 0.4 V Clock Frequency (50% Duty Cycle) fSCLK — — 26 MHz 1. Load = 20 pF @ maximum clock frequency. Table 4. Thermal Characteristics Characteristics Symbol Value (2) Unit Thermal Resistance, Junction to Case Case Temperature 105C, Pout = 0.02 W, Maximum Phase and Attenuation State, Pin = 25 dBm CW, 900 MHz, VDD =5 Vdc, IDD =11 mA RJC 15 C/W Table 5. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) III Table 6. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. |
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