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MHT2012N bảng dữ liệu(PDF) 2 Page - NXP Semiconductors |
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MHT2012N bảng dữ liệu(HTML) 2 Page - NXP Semiconductors |
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2 / 14 page ![]() 2 RF Device Data NXP Semiconductors MHT2012N Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +150 C Input Power Pin 20 dBm Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 81C, 12.5 W, 2450 MHz Stage 1, 28 Vdc, IDQ1 =12 mA Stage 2, 28 Vdc, IDQ2 =72 mA RJC 14 4.3 C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JS--001--2017) 1B, passes 500 V Charge Device Model (per JS--002--2014) C3, passes 1000 V Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table 5. Electrical Characteristics (TA =25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Stage 1 -- Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS =65 Vdc, VGS =0 Vdc) IDSS — — 1 Adc Zero Gate Voltage Drain Leakage Current (VDS =32 Vdc, VGS =0 Vdc) IDSS — — 500 nAdc Gate--Source Leakage Current (VGS =0.9 Vdc, VDS =0 Vdc) IGSS — — 200 nAdc Stage 1 -- On Characteristics Gate Threshold Voltage (VDS =10 Vdc, ID =3 Adc) VGS(th) 0.8 1.2 1.6 Vdc Fixture Gate Quiescent Voltage (4) (VDS =28 Vdc, IDQ1 =12 mAdc) VGG(Q) — 4.9 — Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. 4. Data measured in NXP test fixture with 4.7 k resistor in series with VGS1 and VGS2 pins. (continued) |
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