SCM1276MF datasheet(7/53 Pages) SANKEN

7 / 53 page

SCM1270MF Series

SCM1270MF-DSE Rev.1.4

SANKEN ELECTRIC CO., LTD.

Aug. 9, 2018

http://www.sanken-ele.co.jp/en

3.2.

Bootstrap Diode Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Remarks

Bootstrap Diode Leakage Current

ILBD

VR = 600 V

—

μA

Bootstrap Diode Forward

Voltage

VFB

IFB = 0.15 A

—

1.1

1.3

Bootstrap Diode Series Resistor

RBOOT

17.6

22.0

26.4

3.3.

Thermal Resistance Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Remarks

Junction-to-Case Thermal

Resistance

( 1)

R(j-c)Q

( 2)

1 element operating

(IGBT)

—

3.7

°C/W

SCM1271MF

—

SCM1272MF

SCM1274MF

SCM1276MF

R(j-c)F

( 3)

1 element operating

(freewheeling diode)

—

4.5

°C/W

SCM1271MF

—

SCM1272MF

SCM1274MF

SCM1276MF

(1) Refers to a case temperature at the measurement point described in Figure 3-1, below.

(2) Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient

thermal characteristics, see Section 15.1.

(3) Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case.

Measurement point

Figure 3-1.

Case Temperature Measurement Point

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