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RW1C026ZP bảng dữ liệu(PDF) 3 Page - Rohm

tên linh kiện RW1C026ZP
Giải thích chi tiết về linh kiện  Pch -20V -2.5A Middle Power MOSFET
PDF  12 Pages
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nhà sản xuất  ROHM [Rohm]
Trang chủ  http://www.rohm.com
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RW1C026ZP bảng dữ liệu(HTML) 3 Page - Rohm

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RW1C026ZP
　 　 　 　 　 　
　 　 　 　 　 　 　 　
Datasheet
l
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
1250
-
pF
Output capacitance
Coss
VDS = -10V
-
100
-
Reverse transfer capacitance
Crss
f = 1MHz
-
30
-
Turn - on delay time
td(on)*3
VDD ⋍ -10V,VGS = -4.5V
-
170
-
ns
Rise time
tr*3
ID = -1.2A
-
290
-
Turn - off delay time
td(off)*3
RL = 8.3Ω
-
2550
-
Fall time
tf*3
RG = 10Ω
-
850
-
l
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Total gate charge
Qg*3
VDD ⋍ -10V, ID = -2.5A
VGS = -4.5V
-
10
-
nC
Gate - Source charge
Qgs*3
-
2.1
-
Gate - Drain charge
Qgd*3
-
2.0
-
l
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Body diode continuous
forward current
IS
Ta = 25℃
-
-
-0.5
A
Body diode
pulse current
ISP*1
-
-
-10
Forward voltage
VSD*3
VGS = 0V, IS = -2.5A
-
-
-1.2
V
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
3/11
20140707 - Rev.001



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