CS45-08IO1 datasheet(5/5 Pages) IXYS

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CS45-08io1

0.01

0.1

200

250

300

350

400

450

0.5

1.0

1.5

2.0

100

101

102

103

104

0.0

0.1

0.2

0.3

0.4

TSM

[A]

T [V]

t [ms]

thJC

[K/W]

4 5 6 7 8 9 0

100

1000

10000

2s]

t [ms]

T(AV)M

[A]

C [°C]

75 100 125 150 175

Fig. 1 Forward characteristics

Fig. 3 I

2t versus time (1-10 ms)

t [s]

Fig. 6 Max. forward current

at case temperature

Fig. 2 Surge overload current

Fig. 8 Transient thermal impedance junction to case

VJ = 25°C

VJ = 125°C

VJ = 45°C

50 Hz, 80% V

RRM

VJ = 125°C

VJ = 45°C

R = 0 V

125°C

150°C

T(AV) [A]

(AV)

[W]

Fig. 7a Power dissipation versus direct output current

Fig. 7b and ambient temperature

100

150

amb [°C]

dc =

0.5

0.4

0.33

0.17

0.08

100

1000

100

1000

100

1000

10000

0.1

G [mA]

[V]

[µs]

G [mA]

typ.

Limit

VJ = 125°C

Fig. 4 Gate trigger characteristics

Fig. 5 Gate controlled delay time

1: I

GD, TVJ = 150°C

2: IGT, TVJ = 25°C

3: IGT, TVJ = -40°C

thHA

0.6

0.8

1.0

2.0

4.0

8.0

dc =

0.5

0.4

0.33

0.17

0.08

4: P

GAV = 0.5 W

5: PGM = 5 W

6: PGM = 10 W

thi [K/W]

i [s]

0.044

0.011

0.039

0.0001

0.047

0.02

0.09

0.4

0.18

0.12

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.

20150827d

Data according to IEC 60747and per semiconductor unless otherwise specified

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