BGS8H2 datasheet(6/15 Pages) NXP

6 / 15 page

NXP Semiconductors

BGS8H2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8H2

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 29 June 2018

COMPANY CONFIDENTIAL

6 / 15

9 Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

See legal section: "disclaimers" paragraph "Limiting values".

Symbol

Parameter

Conditions

Min

Max

Unit

VCC

supply voltage

RF input AC coupled

[1] -0.5

+5.0

VI(CTRL)

input voltage on pin CTRL

VI(CTRL) < VCC + 0.6 V

[1][2] -0.5

+5.0

VI(RF_IN)

input voltage on pin RF_IN

DC; VI(RF_IN) < VCC + 0.6 V

[1][2] -0.5

+5.0

VI(RF_OUT)

input voltage on pin RF_OUT

DC; VI(RF_OUT) < VCC + 0.6 V

[1][2][3] -0.5

+5.0

input power

[1] -

dBm

Ptot

total power dissipation

Tsp ≤ 130 °C

Tstg

storage temperature

-65

+150

°C

junction temperature

150

°C

Human Body Model (HBM) according to

ANSI/ESDA/JEDEC standard JS-001

±2

VESD

electrostatic discharge voltage

Charged Device Model (CDM) according to

JEDEC standard JESD22-C101C

±1

[1]

Stressed with pulses of 1 s in duration. VCC connected to a power supply of 2.8 V with 500 mA current limit.

[2]

Warning: Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed VCC + 0.6 V or 5.0 V.

[3]

The RF input and RF output are AC coupled through internal DC blocking capacitors.

10 Recommended operating conditions

Table 6. Operating conditions

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCC

supply voltage

[1]

1.5

3.1

Tamb

ambient temperature

-40

+25

+85

°C

OFF state

0.3

VI(CTRL)

input voltage on pin CTRL

ON state

0.8

Vcc

[1]

Stressed with pulses of 1 s in duration. VCC connected to a power supply with 500 mA current limit.

11 Thermal characteristics

Table 7. Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-sp)

thermal resistance from junction to solder point

225

K/W

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