BAV23C datasheet(2/5 Pages) VISHAY

2 / 5 page

BAV23C

www.vishay.com

Vishay Semiconductors

Rev. 1.5, 13-Feb-18

Document Number: 81902

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Ptot - Admissible Power Dissipation vs. Ambient Temperature

Fig. 2 - IFSM - Non-Repetitive Peak Forward Current vs. Pulse Duration - Maximum Admissible Values of Square Pulses

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Reverse breakdown voltage

IR = 100 μA, tp = 300 ms

V(BR)

250

Forward voltage

IF = 100 mA

IF = 200 mA

1.25

Reverse current

VR = 200 V

100

VR = 200 V, Tj = 150 °C

100

μA

Dynamic forward resistance

IF = 10 mA



Diode capacitance

VR = 0 V, f = 1 MHz

5pF

Reverse recovery time

IF = IR = 30 mA, RL = 100 

iR = 3 mA

trr

100

150

200

250

300

350

400

450

500

100

150

Tamb (°C)

100

0.1

0.000001

0.00001

0.0001

0.001

0.01

0.1

Test pulse tp (s)

j = 25 °C - prior to surge

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