1N4151WS datasheet(2/5 Pages) VISHAY

2 / 5 page

1N4151WS

www.vishay.com

Vishay Semiconductors

Rev. 1.8, 06-Jul-17

Document Number: 85847

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 2 - Dynamic Forward Resistance vs. Forward Current

Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 4 - Relative Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 50 mA

Leakage current

VR = 50 V

VR = 20 V, Tj = 150 °C

μA

Reverse breakdown voltage

IR = 5 µA (pulsed)

V(BR)

Capacitance

VF = VR = 0 V

Reverse recovery time

IF = 10 mA, IR = 10 mA

iR = 1 mA

trr

4ns

IF = 10 mA, iR = 1 mA,

VR = 6 V, RL = 100

trr

2ns

18742

1000

100

0.1

0.01

0.4 0.6 0.8

1 1.2 1.4 1.6 1.8 2

0.2

V - Forward Voltage (V)

=100

°C

18662

100

1000

10000

110

0.1

0.01

100

IF - Forward Current (mA)

=25

°C

f=1kHz

200

18743

Tamb - Ambient Temperature (°C)

1000

800

600

400

200

20 40 60 80 100 120 140 160180

18664

2468

1.1

1.0

0.9

0.8

0.7

VR - Reverse Voltage (V)

=25

°C

f=1MHz

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