MMRF2010N datasheet(7/23 Pages) NXP

7 / 23 page

MMRF2010N MMRF2010GN

RF Device Data

NXP Semiconductors

TYPICAL CHARACTERISTICS — 1030–1090 MHz

400

Pout, OUTPUT POWER (WATTS) PEAK

Figure 6. Power Gain and Drain Efficiency versus

Output Power and Frequency

200

Gps

ηD

100

150

250

300

350

1090 MHz

Figure 7. Power Gain and Drain Efficiency versus

Output Power and Frequency — Long Pulse

1030 MHz

Pin, INPUT POWER (WATTS) PEAK

Figure 8. Output Power versus Input Power and Frequency

250

150

100

350

300

Pin, INPUT POWER (WATTS) PEAK

Figure 9. Output Power versus Input Power and

Frequency — Long Pulse

1030 MHz

VDD =52 V,IDQ1 =80 mA, IDQ2 = 150 mA

Pulse Width = 128 μsec, Duty Cycle = 10%

1090 MHz

1030 MHz

400

Pout, OUTPUT POWER (WATTS) PEAK

200

Gps

ηD

100

150

250

300

350

1090 MHz

1030 MHz

1090 MHz

1030 MHz

VDD =52 V,IDQ1 =80 mA, IDQ2 = 150 mA

Pulse Width = 2 msec, Duty Cycle = 20%

200

0.05

0.1

0.15

0.2

0.25

0.3

VDD =52 V,IDQ1 =80 mA, IDQ2 = 150 mA

Pulse Width = 128 μsec, Duty Cycle = 10%

0.05

0.1

0.15

0.2

0.25

0.3

250

150

100

350

300

200

VDD =52 V,IDQ1 =80 mA, IDQ2 = 150 mA

Pulse Width = 2 msec, Duty Cycle = 20%

1090 MHz

1030 MHz

1090 MHz

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