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SFF2002GD bảng dữ liệu(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

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Giải thích chi tiết về linh kiện  20.0 Amperes Insulated Dual Doubler Polarity Super Fast Recovery Rectifiers
PDF  2 Pages
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nhà sản xuất  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Trang chủ  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

SFF2002GD bảng dữ liệu(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

  SFF2002GD Datasheet HTML 1Page - Thinki Semiconductor Co., Ltd. SFF2002GD Datasheet HTML 2Page - Thinki Semiconductor Co., Ltd.  
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Features
Low forward voltage drop
Super fast switching for high efficiency
High current capability
Case: ITO-220AB full plastic isolated package
High surge current capability
Weight: 1.90 gram approximately
Polarity: As marked on diode body
method 208
Mounting position: Any
Terminals: Solderable per MIL-STD-202
Mechanical Data
Low reverse leakage current
Epoxy: UL 94V-0 rate flame retardant
SFF2001GD thru SFF2008GD
Pb Free Plating Product
SFF2001GD thru SFF2008GD
20.0 Amperes Insulated Dual Doubler Polarity Super Fast Recovery Rectifiers
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
Page 1/2
Application
Pb
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Rev.08T
ITO-220AB/TO-220F-3L
Positive
Negative
Common Cathode
Case
Case
Common Anode
Doubler
Case
Tandem Polarity
Case
Series
Tandem Polarity
Suffix "GA"
Suffix "GD"
Suffix "GS"
Suffix "G"
.189(4.8)
.406(10.3)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.035(0.9)
.011(0.3)
(2.55)
(2.55)
.1
.1
.032(.8)
.134(3.4)
.165(4.2)
.381(9.7)
.114(2.9)
.098(2.5)
.055(1.4)
.039(1.0)
MAX
.118(3.0)
Unit : inch (mm)
VRRM
50
100
150
200
300
400
500
600
V
VRMS
35
70
105
140
210
280
350
420
V
VDC
50
100
150
200
300
400
500
600
V
IF(AV)
A
trr
ns
CJ
pF
RθJC
°C/W
TJ
°C
TSTG
°C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
UNIT
Maximum repetitive peak reverse voltage
PARAMETER
SYMBOL
SFF
2001
GD
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
20
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Maximum instantaneous forward voltage (Note 1)
@ 10 A
VF
0.975
1.3
1.7
V
Maximum reverse current @ rated VR
TJ=25°C
IR
10
μA
TJ=125°C
400
- 55 to +150
Storage temperature range
- 55 to +150
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
Maximum reverse recovery time (Note 2)
35
Typical junction capacitance (Note 3)
Typical thermal resistance
2.5
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
SFF
2002
GD
SFF
2003
GD
SFF
2004
GD
SFF
2005
GD
SFF
2006
GD
SFF
2007
GD
SFF
2008
GD
90
Operating junction temperature range


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