14

RF Device Data

Freescale Semiconductor, Inc.

AFT05MS003N

TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND

PRODUCTION TEST FIXTURE

0

12

3

2

1

3

4

1.5

2.5

4

5

Figure 15. Output Power versus Gate--Source Voltage

Figure 16. Power Gain, Output Power and Drain

Efficiency versus Input Power

0

6

3

0

30

50

40

10

20

15

12

9

18

60

70

80

f = 520 MHz

21

24

40

80

160

90

3.5

120

f

MHz





520

1.86 + j4.46

4.30 + j3.43

gate to ground.

drain to ground.

Figure 17. Narrowband Series Equivalent Source and Load Impedance — 520 MHz

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

50 

50 