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F60UP30DN bảng dữ liệu(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

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Giải thích chi tiết về linh kiện  60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers
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nhà sản xuất  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Trang chủ  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

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Pb Free Plating Product
F60UP30DN
Pb
60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers
MBRF20100CT thru MBRF20200CT
F60UP30DN
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
Page 1/2
Rev.08T
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
APPLICATION
GENERAL DESCRIPTION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
PRODUCT FEATURE
F60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
TO-3PB(TO-3PN)
Internal Configuration
Cathode(Bottom Side Metal Heatsink)
Cathode
Anode
Base Backside
—
—
—
—
—
—
—
—
—
—
Anode
Absolute Maximum Ratings
Parameter
Symbol
Test Conditions
Values
Units
Repetitive peak reverse voltage
VRRM
300
V
Continuous forward current
IF(AV)
Tc =110
°C
60
A
Single pulse forward current
IFSM
Tc =25
°C
600
Maximum repetitive forward current
IFRM
Square wave, 20kHZ
150
Operating junction
Tj
175
°C
Storage temperatures
Tstg
-55 to +175
°C
Electrical characteristics (Ta=25
°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ.
Max.
Units
Breakdown voltage
Blocking voltage
VBR,
VR
IR=100µA
300
V
Forward voltage
(Per Diode)
VF
IF=30A
0.96
1.20
IF=30A, Tj =125
°C
0.85
1.00
Reverse leakage
current(Per Diode)
IR
VR= VRRM
10
µ
A
Tj=150
°C, VR=300V
100
Reverse recovery
time(Per Diode)
trr
IF=0.5A, IR=1A, IRR=0.25A
35
45
ns
IF=1A,VR=30V, di/dt =200A/us
26
40
Thermal characteristics
Paramter
Symbol
Typ
Units
Junction-to-Case
RθJC
0.8
℃
/W


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