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F60UP30DN bảng dữ liệu(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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F60UP30DN bảng dữ liệu(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
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1 / 2 page ![]() Pb Free Plating Product F60UP30DN Pb 60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers MBRF20100CT thru MBRF20200CT F60UP30DN © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Rev.08T · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current APPLICATION GENERAL DESCRIPTION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS PRODUCT FEATURE F60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. TO-3PB(TO-3PN) Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside — — — — — — — — — — Anode Absolute Maximum Ratings Parameter Symbol Test Conditions Values Units Repetitive peak reverse voltage VRRM 300 V Continuous forward current IF(AV) Tc =110 °C 60 A Single pulse forward current IFSM Tc =25 °C 600 Maximum repetitive forward current IFRM Square wave, 20kHZ 150 Operating junction Tj 175 °C Storage temperatures Tstg -55 to +175 °C Electrical characteristics (Ta=25 °C unless otherwise specified) Parameter Symbol Test Conditions Min Typ. Max. Units Breakdown voltage Blocking voltage VBR, VR IR=100µA 300 V Forward voltage (Per Diode) VF IF=30A 0.96 1.20 IF=30A, Tj =125 °C 0.85 1.00 Reverse leakage current(Per Diode) IR VR= VRRM 10 µ A Tj=150 °C, VR=300V 100 Reverse recovery time(Per Diode) trr IF=0.5A, IR=1A, IRR=0.25A 35 45 ns IF=1A,VR=30V, di/dt =200A/us 26 40 Thermal characteristics Paramter Symbol Typ Units Junction-to-Case RθJC 0.8 ℃ /W |
Số phần tương tự - F60UP30DN |
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Mô tả tương tự - F60UP30DN |
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