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TC7SAU04FU bảng dữ liệu(PDF) 4 Page - Toshiba Semiconductor

tên linh kiện TC7SAU04FU
Giải thích chi tiết về linh kiện  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
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nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
Trang chủ  http://www.semicon.toshiba.co.jp/eng
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TC7SAU04FU bảng dữ liệu(HTML) 4 Page - Toshiba Semiconductor

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TC7SAU04F/FU
2002-12-13
4
AC Characteristics (Ta
==== ----40~85°C, input: tr ==== tf ==== 2.0 ns, CL ==== 30 pF, RL ==== 500 W
W
W
W)
Characteristics
Symbol
Test Condition
VCC (V)
Min
Max
Unit
1.8
1.0
8.4
2.5
± 0.2
0.8
4.2
Propagation delay time
tpLH
tpHL
Figure 1, Figure 2
3.3
± 0.3
0.6
3.5
ns
For CL = 50 pF, add approximately 300 ps to the AC maximum specification.
Dynamic Switching Characteristics (Ta
==== 25°C, input: tr ==== tf ==== 2.0 ns, CL ==== 30 pF)
Characteristics
Symbol
Test Condition
VCC (V)
Typ.
Unit
VIN = 1.8 V, VIL = 0 V
(Note 9)
1.8
0.25
VIN = 2.5 V, VIL = 0 V
(Note 9)
2.5
0.6
Quiet output maximum dynamic VOL
VOLP
VIN = 3.3 V, VIL = 0 V
(Note 9)
3.3
0.8
ns
VIN = 1.8 V, VIL = 0 V
(Note 9)
1.8
-0.25
VIN = 2.5 V, VIL = 0 V
(Note 9)
2.5
-0.6
Quiet output minimum dynamic VOL
VOLV
VIN = 3.3 V, VIL = 0 V
(Note 9)
3.3
-0.8
ns
VIN = 1.8 V, VIL = 0 V
(Note 9)
1.8
1.5
VIN = 2.5 V, VIL = 0 V
(Note 9)
2.5
1.9
Quiet output minimum dynamic VOH
VOLP
VIN = 3.3 V, VIL = 0 V
(Note 9)
3.3
2.2
ns
Note 9: Parameter guaranteed by design.
Capacitive Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
VCC (V)
Typ.
Unit
Input capacitance
CIN
¾
1.8, 2.5, 3.3
4
pF
Power dissipation capacitance
CPD
fIN = 10 MHz
(Note 10)
1.8, 2.5, 3.3
7
pF
Note 10: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation.
ICC (opr.) = CPD・VCC・fIN + ICC



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