2SD2136 datasheet(1/3 Pages) PANASONIC

tên linh kiện	2SD2136

Giải thích chi tiết về linh kiện	Silicon PNP epitaxial planar type

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1

Power Transistors

Publication date: March 2003

SJD00071BED

2SB1416

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SD2136

■ Features

• High forward current transfer ratio h

FE which has satisfactory

linearity

• Low collector-emitter saturation voltage V

CE(sat)

• Allowing automatic insertion with radial taping

■ Absolute Maximum Ratings T

a

= 25°C

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

1: Emitter

2: Collector

3: Base

MT-3-A1 Package

7.5±0.2

0.65±0.1

0.7±0.1

1.15±0.2

2.5±0.2

0.85±0.1

1.0±0.1

0.7±0.1

1.15±0.2

0.5±0.1

1

0.8 C

23

0.4±0.1

4.5±0.2

0.8 C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

−60

V

Collector-emitter voltage (Base open)

VCEO

−60

V

Emitter-base voltage (Collector open)

VEBO

−5V

Collector current

IC

−3A

Peak collector current

ICP

−5A

Collector power dissipation

PC

1.5

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

P

Q

R

hFE1

40 to 90

70 to 150

120 to 250

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

VCEO

IC = −30 mA, IB = 0

−60

V

Base-emitter voltage

VBE

VCE

= −4 V, I

C

= −3 A

−1.8

V

Collector-emitter cutoff current (E-B short)

ICES

VCE = −60 V, VBE = 0

−200

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE = −30 V, IB = 0

−300

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB

= −5 V, I

C

= 0

−1mA

Forward current transfer ratio

hFE1 *

VCE = −4 V, IC = −1 A

40

250



hFE2

VCE = −4 V, IC = −3 A

10

Collector-emitter saturation voltage

VCE(sat)

IC

= −3 A, I

B

= − 0.375A

−1.2

V

Transition frequency

fT

VCB = −5 V, IE = 0.1 A, f = 200 MHz

270

MHz

Turn-on time

ton

IC = −1 A, IB1 = − 0.1 A, IB2 = 0.1 A

0.5

µs

Storage time

tstg

1.2

µs

Fall time

tf

0.3

µs

Số phần tương tự - 2SD2136

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	2SD2136	169Kb / 4P	POWER TRANSISTOR
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