MSB92ASWT1 datasheet(2/6 Pages) ONSEMI

tên linh kiện	MSB92ASWT1

Giải thích chi tiết về linh kiện	PNP Silicon General Purpose High Voltage Transistor

PDF	6 Pages

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nhà sản xuất	ONSEMI [ON Semiconductor]

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MSB92ASWT1

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ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0)

V(BR)CEO

-300

Vdc

Collector-Base Breakdown Voltage (IC = -100 mAdc, IE = 0)

V(BR)CBO

-300

Vdc

Emitter-Base Breakdown Voltage (IE = -100 mAdc, IE = 0)

V(BR)EBO

-5.0

Vdc

Collector-Base Cutoff Current (VCB = 300 Vdc, IE = 0)

ICBO

-0.25

Emitter-Base Cutoff Current (VEB = -3.0 Vdc, IB = 0)

IEBO

-0.1

DC Current Gain (Note )

MSB92AWT1: (VCE = -10 Vdc, IC = -1.0 mAdc)

(VCE = -10 Vdc, IC = -10 mAdc)

(VCE = -10 Vdc, IC = -30 mAdc)

hFE1

hFE2

hFE3

120

200

Collector-Emitter Saturation Voltage (Note )

(IC = -20 mAdc, IB = -2.0 mAdc)

VCE(sat)

-0.5

Vdc

Base-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc)

VBE(sat)

-0.9

Vdc

SMALL SIGNAL CHARACTERISTICS

Current - Gain - Bandwidth Product

(IC = -10 mAdc, VCE = -20 Vdc, f = 20 MHz)

MHz

Collector-Base Capacitance

(VCB = -20 Vdc, IE = 0, f = 1.0 MHz)

Ccb

6.0

2. Pulse Test: Pulse Width

≤ 300 ms, D.C. ≤ 2%.

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