MCD312-12io1

V

=

V

kA²s

kA²s

kA²s

kA²s

Symbol

Definition

Ratings

typ.

max.

I

V

I

A

V

T

1.12

R

0.12

K/W

min.

320

V

V

1

T

= 25°C

VJ

T

=

°C

VJ

mA

40

V

=

V

T

= 25°C

VJ

I =

A

T

V

T =

°C

C

85

P

tot

960

W

T

= 25°C

C

300

1200

forward voltage drop

total power dissipation

Conditions

Unit

1.32

T

= 25°C

VJ

140

V

T0

V

0.80

T

=

°C

VJ

140

0.68

mΩ

V

1.06

T

=

°C

VJ

I =

A

T

V

300

1.29

I =

A

600

I =

A

600

threshold voltage

slope resistance

for power loss calculation only

mA

125

V

V

1200

T

= 25°C

VJ

I

A

520

P

GM

W

t = 30 µs

120

max. gate power dissipation

P

T

=

°C

C

140

W

t =

60

P

W

20

average gate power dissipation

438

junction capacitance

V =

V

400

T

= 25°C

f = 1 MHz

R

VJ

pF

I

TSM

t = 10 ms; (50 Hz), sine

T

= 45°C

VJ

max. forward surge current

T

=

°C

VJ

140

I²t

T

= 45°C

value for fusing

T

=

°C

140

V

= 0 V

R

V

= 0 V

R

V

= 0 V

V

= 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

thJC

thermal resistance junction to case

T

=

°C

VJ

140

9.60

10.4

332.9

323.3

kA

kA

kA

kA

8.16

8.82

460.8

447.4

1200

500 µs

RMS forward current

T(RMS)

TAV

180° sine

average forward current

A/µs

100

repetitive, I =

T

critical rate of rise of current

V

GT

gate trigger voltage

V = 6 V

T

=

°C

25

(dv/dt)

T

= 140°C

critical rate of rise of voltage

A/µs

500

V/µs

t =

µs;

I

A; V = ⅔ V

R

= ∞; method 1 (linear voltage rise)

VJ

D

VJ

960 A

T

P

1

di /dt

A/µs;

G

=

1

DRM

cr

V = ⅔ V

DRM

GK

1000

2

V

T

=

°C

-40

VJ

gate trigger current

V = 6 V

T

=

°C

25

D

VJ

150

mA

T

=

°C

-40

VJ

3

V

220

mA

V

GD

gate non-trigger voltage

T

=

°C

VJ

0.25

V

I

GD

gate non-trigger current

10

mA

V = ⅔ V

D

DRM

140

latching current

T

=

°C

VJ

200

mA

25

t

µs

30

I

A;

G

= 0.45

di /dt

A/µs

G

= 0.45

holding current

T

=

°C

VJ

150

mA

I

H

25

V = 6 V

D

R

= ∞

GK

gate controlled delay time

T

=

°C

VJ

2

µs

t

gd

25

I

A;

G

=

1

di /dt

A/µs

G

=

1

V = ½ V

D

DRM

turn-off time

T

=

°C

VJ

200

µs

di/dt =

A/µs

10

dv/dt =

V/µs

50

V =

R

100 V; I

A;

V = ⅔ V

DRM

t

µs

non-repet., I = 320 A

T

125

R

thCH

0.040

thermal resistance case to heatsink

K/W

Rectifier

1300

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

R/D

reverse current, drain current

T

T

R/D

R/D

200

IXYS reserves the right to change limits, conditions and dimensions.

20170116e

Data according to IEC 60747and per semiconductor unless otherwise specified

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