 |
công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
|
công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
IRFS41N15D bảng dữ liệu(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRFS41N15D bảng dữ liệu(HTML) 2 Page - International Rectifier |
|
|
2 / 12 page  IRFB/IRFIB/IRFS/IRFSL41N15D 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.045 Ω VGS = 10V, ID = 25A f VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 18 ––– ––– S VDS = 50V, ID = 25A Qg Total Gate Charge ––– 72 110 ID = 25A Qgs Gate-to-Source Charge ––– 21 31 nC VDS = 120V Qgd Gate-to-Drain ("Miller") Charge ––– 35 52 VGS = 10V f td(on) Turn-On Delay Time ––– 16 ––– VDD = 75V tr Rise Time –––63––– ID = 25A td(off) Turn-Off Delay Time ––– 25 ––– ns RG = 2.5Ω tf Fall Time –––14––– VGS = 10V f Ciss Input Capacitance ––– 2520 ––– VGS = 0V Coss Output Capacitance ––– 510 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 3090 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 230 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 250 ––– VGS = 0V, VDS = 0V to 120V g Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy d ––– 470 mJ IAR Avalanche Current à ––– 25 A EAR Repetitive Avalanche Energy ––– 20 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 41 MOSFET symbol (Body Diode) A showing the ISM Pulsed Source Current ––– ––– 164 integral reverse (Body Diode) à p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V f trr Reverse Recovery Time ––– 170 260 ns TJ = 25°C, IF = 25A Qrr Reverse Recovery Charge ––– 1.3 1.9 µC di/dt = 100A/µs f ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
|
|
Link URL |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Vietnamese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
