MMRF1314GS datasheet(6/17 Pages) NXP

6 / 17 page

RF Device Data

NXP Semiconductors

MMRF1314H MMRF1314HS MMRF1314GS

TYPICAL CHARACTERISTICS — 1200–1400 MHz

REFERENCE CIRCUIT

1400

1200

IRL

f, FREQUENCY (MHz)

Figure 5. Power Gain, Drain Efficiency and IRL

versus Frequency at a Constant Input Power

1325

1300

1275

1250

1225

–16

–6

ηD

16.5

13.5

12.5

18.5

17.5

15.5

1350

1375

VDD =52 Vdc,Pin =25 W,IDQ(A+B) = 100 mA

Pulse Width = 128 μsec, Duty Cycle = 10%

–4

–8

14.5

–12

–10

–14

Pout, OUTPUT POWER (WATTS) PEAK

Figure 6. Power Gain and Drain Efficiency versus

Output Power

800

Gps

ηD

200

400

600

1000

1200

1400

1600

800

1300

1200

1225

1200

1100

f, FREQUENCY (MHz)

1250

900

1000

1275

1300

1325

1350

1375

1400

ηD

Figure 7. Output Power and Drain Efficiency versus

Frequency at a Constant Input Power

1200 MHz

1400 MHz

1300 MHz

1200 MHz

1400 MHz

VDD =52 Vdc, IDQ(A+B) = 100 mA

Pulse Width = 128 μsec, Duty Cycle = 10%

VDD =52 Vdc,IDQ(A+B) = 100 mA, Pin =25 W

Pulse Width = 128 μsec, Duty Cycle = 10%

Gps

Pout

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