MMRF1304LR5

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistor

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFET

RF power transistor suitable for both narrowband and broadband CW or

pulse applications operating at frequencies from 1.8 to 2000 MHz, such as

military radio communications and radar. This device is fabricated using

Freescale’s enhanced ruggedness platform and is suitable for use in

applications where high VSWRs are encountered.

Frequency

(MHz)

Signal Type

(W)

(dB)

(%)

IMD

(dBc)

Two--Tone

(10 kHz spacing)

25 PEP

25.0

50.0

--28

Two--Tone

(200 kHz spacing)

25 PEP

17.3

32.0

--32

Pulse

(100 sec, 20%

Duty Cycle)

25 Peak

25.9

74.0

—

CW

25

26.0

75.0

—

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(W)

Test

Voltage

Result

CW

>65:1

at all Phase

Angles

0.11

(3 dB

Overdrive)

50

No Device

Degradation

CW

0.95

(3 dB

Overdrive)

Pulse

(100 sec, 20%

Duty Cycle)

0.14 Peak

(3 dB

Overdrive)

CW

0.14

(3 dB

Overdrive)

1. Measured in 1.8--30 MHz broadband reference circuit.

2. Measured in 30--512 MHz broadband reference circuit.

3. The values shown are the minimum measured performance numbers across the

indicated frequency range.

4. Measured in 512 MHz narrowband test circuit.

Features

 Wide Operating Frequency Range

 Extreme Ruggedness

 Unmatched, Capable of Very Broadband Operation

 Integrated Stability Enhancements

 Low Thermal Resistance

 Extended ESD Protection Circuit

 In Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel.

Document Number: MMRF1304L

Rev. 0, 12/2013

Freescale Semiconductor

Technical Data

1.8--2000 MHz, 25 W, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTOR

MMRF1304LR5

Note: The backside of the package is the

source terminal for the transistor.

NI--360--2

(Top View)

Drain

12

Figure 1. Pin Connections

Gate

 Freescale Semiconductor, Inc., 2013. All rights reserved.