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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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FT28C010 bảng dữ liệu(PDF) 1 Page - Force Technologies Ltd |
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FT28C010 bảng dữ liệu(HTML) 1 Page - Force Technologies Ltd |
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1 / 30 page  FEATURES • Access Time: 120ns • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits —Self-Timed —No Erase Before Write —No Complex Programming Algorithms —No Overerase Problem • Low Power CMOS: —Active: 50mA —Standby: 500µA • Software Data Protection —Protects Data Against System Level Inadvertant Writes • High Speed Page Write Capability • Highly Reliable Cell —Endurance: 100,000 Write Cycles —Data Retention: 100 Years • Early End of Write Detection —DATA Polling —Toggle Bit Polling DESCRIPTION The Force FT28C010 is a 128K x 8 E2PROM, fabricated with, high performance, floating gate CMOS technology. Like most Force programmable nonvolatile memories the FT28C010 is a 5V only device. The FT28C010 features the JEDEC approved pinout for byte- wide memories, compatible with industry standard EPROMs. The FT28C010 supports a 256-byte page write operation, effectively providing a 19 µs/byte write cycle and en- abling the entire memory to be typically written in less than 2.5 seconds. The FT28C010 also features DATA Polling and Toggle Bit Polling, system software support schemes used to indicate the early completion of a write cycle. In addition, the FT28C010 supports Software Data Protection option. Force E2PROMs are designed and tested for applica- tions requiring extended endurance. Data retention is specified to be greater than 100 years. FT28C010-xxxxx-X 128K x 8 Bit 5V EEPROM FEATURES • Fast Read Access Time 120ns • Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer • Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation • Low Power Dissipation 80 mA Active Current 300 µA CMOS Standby Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology Endurance: 104 Data Retention: 10 Years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs DESCRIPTION The FT28C010 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its one megabit of memory isorganised as 131,072 words by 8 bits. Manufactured with advanced nonvolatile CMOS technology, the device offersaccess times to 120 ns with power dissipa- tion of just 440 mW. When the device isdeselected, the CMOS standby current is less than 300 mA. -X Manufactured using Xicor Die 128K x 8 Bit 5V EEPROM • -AT Manufactured using Atmel Die • (Cont) FT28C010-xxxxx-AT Rev 1.1 1/30 2011 |
Số phần tương tự - FT28C010 |
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Mô tả tương tự - FT28C010 |
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