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AOC2804B bảng dữ liệu(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOC2804B bảng dữ liệu(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page ![]() AOC2804B Symbol Min Typ Max Units BVSSS 20 V 1 TJ=55°C 5 IGSS ±10 µA VGS(th) Gate Threshold Voltage 0.5 0.9 1.3 V 20 28 34 TJ=125°C 27 38.5 47 22 30.5 38 mΩ 23 32 40 mΩ 25 35 45 mΩ 30 42.5 56 mΩ gFS 20 S VFSS 0.72 1 V Rg 2 KΩ Qg 9.5 nC tD(on) 0.85 µs tr 2.2 µs tD(off) 2.0 µs tf 4.3 µs THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. SWITCHING PARAMETERS VSS=0V, VGS=±10V Test Circuit 2 Gate leakage current RSS(ON) VSS=VGS, IS=250µA Test Circuit 3 VGS=4.5V, IS=3A Test Circuit 4 mΩ VGS=4.0V, IS=3A Test Circuit 4 DYNAMIC PARAMETERS Gate resistance f=1MHz Turn-Off Fall Time VG1S1=4.5V, VSS=10V, RL=3.3Ω, RGEN=3Ω Test Circuit8 Forward Source to Source Voltage VGS=3.7V, IS=3A Test Circuit 4 Turn-On Rise Time Forward Transconductance IS=1A,VGS=0V Test Circuit 5 VSS=5V, IS=3A Test Circuit 3 Turn-On DelayTime Turn-Off DelayTime Static Source to Source On-Resistance VGS=3.1V, IS=3A Test Circuit 4 VGS=2.5V, IS=3A Test Circuit 4 VG1S1=4.5V, VSS=10V, IS=3A Total Gate Charge Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions ISSS µA Zero Gate Voltage Source Current Source-Source Breakdown Voltage IS=250µA, VGS=0V Test Circuit 6 VSS=20V, VGS=0V Test Circuit 1 Rev.1.0: July 2015 www.aosmd.com Page 2 of 5 |
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