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FSB50825AS bảng dữ liệu(PDF) 3 Page - ON Semiconductor

tên linh kiện FSB50825AS
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FSB50825AS bảng dữ liệu(HTML) 3 Page - ON Semiconductor

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©2012 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FSB50825AS Rev. 1.6
Absolute Maximum Ratings
Inverter Part (each MOSFET unless otherwise specified.)
Control Part (each HVIC unless otherwise specified.)
Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)
Thermal Resistance
Total System
1st Notes:
1. For the measurement point of case temperature TC, please refer to Figure 4.
2. Marking “ * “ is calculation value or design factor.
Symbol
Parameter
Conditions
Rating
Unit
VDSS
Drain-Source Voltage of Each MOSFET
250
V
*ID 25
Each MOSFET Drain Current, Continuous TC = 25°C
3.6
A
*ID 80
Each MOSFET Drain Current, Continuous TC = 80°C
2.7
A
*IDP
Each MOSFET Drain Current, Peak
TC = 25°C, PW < 100 s
9.0
A
*IDRMS
Each MOSFET Drain Current, Rms
TC = 80°C, FPWM < 20 kHz
1.9
Arms
*PD
Maximum Power Dissipation
TC = 25°C, For Each MOSFET
14.2
W
Symbol
Parameter
Conditions
Rating
Unit
VCC
Control Supply Voltage
Applied Between VCC and COM
20
V
VBS
High-side Bias Voltage
Applied Between VB and VS
20
V
VIN
Input Signal Voltage
Applied Between IN and COM
-0.3 ~ VCC + 0.3
V
Symbol
Parameter
Conditions
Rating
Unit
VRRMB
Maximum Repetitive Reverse Voltage
250
V
* IFB
Forward Current
TC = 25°C
0.5
A
* IFPB
Forward Current (Peak)
TC = 25°C, Under 1ms Pulse Width
1.5
A
Symbol
Parameter
Conditions
Rating
Unit
RJC
Junction to Case Thermal Resistance
Each MOSFET under Inverter Oper-
ating Condition (1st Note 1)
8.8
°C/W
Symbol
Parameter
Conditions
Rating
Unit
TJ
Operating Junction Temperature
-40 ~ 150
°C
TSTG
Storage Temperature
-40 ~ 125
°C
VISO
Isolation Voltage
60 Hz, Sinusoidal, 1 Minute, Con-
nect Pins to Heat Sink Plate
1500
Vrms



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