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MBR1540CT bảng dữ liệu(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBR1540CT bảng dữ liệu(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page ![]() MBR1530CT-MBR1560CT SCHOTTKY BARRIER RECTIFIER FEATURES ・ Schottky Barrier Chip ・ Guard Ring Die Construction for Transient Protection ・ Low Power Loss, High Efficiency ・ High Surge Capability ・ High Current Capability and Low Forward Voltage Drop ・ For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications 1 2 2 3 ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Characteristic Symbol MBR 1530CT MBR 1535CT MBR 1540CT MBR 1545CT MBR 1550CT MBR 1560CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 35 40 45 50 60 V PMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V Average Rectified Output Current (Note 1) @ T C =105 ℃ IO 15 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage Drop @ I F =7.5A, T C =125 ℃ @ I F=7.5A, T C= 25℃ VFM 0.57 0.70 0.65 0.75 V Peak Reverse Current @ T C = 25 ℃ at Rated DC Blocking Voltage @ T C =125 ℃ IRM 0.1 15 1.0 50 mA Typical Junction Capacitance (Note 2) Cj 300 pF Operating and Storage Temperature Range Tj,TSTG -65 to +150 ℃ Notes: 1. Thermal resistance junction to case mounted heatsink. 2. Measured at 1.OMHz and applied reverse voltage of 4.0V D 1 2 3 TO—220 1.ANODE 2.CATHODE 3.ANODE 东莞市华远电子有限公 司 DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-220 Plastic-Encapsulate Transistors |
Số phần tương tự - MBR1540CT |
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Mô tả tương tự - MBR1540CT |
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