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FS75R07N2E4 bảng dữ liệu(PDF) 2 Page - Infineon Technologies AG

tên linh kiện FS75R07N2E4
Giải thích chi tiết về linh kiện  EconoPACK2 Modul mit Trench
PDF  9 Pages
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nhà sản xuất  INFINEON [Infineon Technologies AG]
Trang chủ  http://www.infineon.com
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FS75R07N2E4 bảng dữ liệu(HTML) 2 Page - Infineon Technologies AG

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TechnischeInformation/TechnicalInformation
FS75R07N2E4
IGBT-Module
IGBT-modules
preparedby:AS
approvedby:RS
dateofpublication:2013-11-06
revision:2.0
VorläufigeDaten
PreliminaryData
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
VCES

650
 V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 70°C, Tvj max = 175°C
IC nom

75
 A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM

150
 A
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot

250
 W
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VGES

+/-20
 V
CharakteristischeWerte/CharacteristicValues
min.
typ.
max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
VCE sat
1,55
1,70
1,75
1,95
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 1,20 mA, VCE = VGE, Tvj = 25°C
VGEth
5,0
5,8
6,5
V
Gateladung
Gatecharge
VGE = -15 V ... +15 V
QG

0,75

µC
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
RGint

0,0

Ω
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies

4,60

nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres

0,145

nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
ICES


1,0
mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES


400
nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 75 A, VCE = 300 V
VGE = ±15 V
RGon = 5,1
Ω
td on

0,025
0,025
0,025

µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 75 A, VCE = 300 V
VGE = ±15 V
RGon = 5,1
Ω
tr

0,02
0,02
0,02

µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 75 A, VCE = 300 V
VGE = ±15 V
RGoff = 5,1
Ω
td off

0,21
0,24
0,25

µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 75 A, VCE = 300 V
VGE = ±15 V
RGoff = 5,1
Ω
tf

0,06
0,07
0,07

µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 75 A, VCE = 300 V, LS = 30 nH
VGE = ±15 V, di/dt = 4000 A/µs (Tvj = 150°C)
RGon = 5,1
Ω
Eon

0,385
0,55
0,66

mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 75 A, VCE = 300 V, LS = 30 nH
VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C)
RGoff = 5,1
Ω
Eoff

3,35
3,90
4,20

mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE
≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC

360
290

A
A
Tvj = 25°C
Tvj = 150°C
tP
≤ 10 µs,
tP
≤ 10 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
RthJC


0,60
K/W
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proIGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH

0,20
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

Tvj op
-40

150
°C



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