Isocom Ltd reserves the right to change the details on this specification without notice. Please consult Isocom Ltd prior to use.

Isocom Ltd cannot accept liability for any errors or omissions.

For sales enquiries, or further information, please contact our sales office at :

Isocom Ltd, Hutton Close, Crowther Industrial Estate, District 3, Washington, NE38 0AH

ABSOLUTE MAXIMUM RATINGS

Storage Temperature

-55°C to +150°C

Operating Temperature

-55°C to +100°C

Lead Soldering Temperature

260°C 1.6mm from case for 10S

Input-to-Output Isolation Voltage

4000VDC

Input Diode

Forward DC Current

60mA

Reverse DC Voltage

6V

Peak forward Current

3A

1µS p.w. 300 pps

Power Dissipation

100mW

Derate linearly above 25°C at 1.33mW/°C.

Output Transistor

Collector-Emitter Voltage

70V

Emitter-collector voltage

7V

Collector-base Voltage

70V

Power Dissipation

300mW

Derate linearly above 25°C at 2.0mW/°C

ELECTRICAL CHARACTERISTICS

Input Diode Electrical Characteristics

Parameter

Symbol

Test Conditions

Device

Min

Typ

Max

Units

Forward Voltage

0.8

1.5

V

0.9

1.7

V

1.4

V

Reverse Current

10

µA

Output Detector Electrical Characteristics

Collector-Emitter

Breakdown Voltage

70

V

Emitter-base Voltage

7

V

Collector-base Voltage

70

V

Collector-emitter Dark

Current

50

nA

Collector-emitter

Capacitance

2.0

pF

Coupled Electrical Characteristics

DC Current Transfer Ratio

AV1X

AV2X

AV3X

100

50

20

300

%

Input-to-Output Isolation

Resistance

10

11

Ω

Collector-Emitter Saturation

Voltage

0.4

V

Capacitance Input to Output

f= 1Mhz

0.5

pF

Turn-on Time

15

µS

Turn-off Time

15

µS

Input-to-Output Isolation

Voltage

4000

V