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FAM65V05DF1 bảng dữ liệu(PDF) 7 Page - ON Semiconductor

tên linh kiện FAM65V05DF1
Giải thích chi tiết về linh kiện  Automotive 3-Phase IGBT Smart Power Module
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© 2016 Semiconductor Component Industries, LLC
www.onsemi.com
FAM65V05DF1 Rev. 1.0
www.fairchildsemi.com
6
Electrical Specifications
Inverter part (TJ as specified)
Symbol
Parameters
Conditions
Min
Typ
Max
Unit
VCE(SAT)
Collector-Emitter Saturation
Voltage
VCC = VBS = 15 V, VIN = 5 V
IC = 50 A, TJ = 25°C
-
1.65
-
V
VCC = VBS = 15 V, VIN = 5 V
IC = 50 A, TJ = 125°C
-
1.9
2.4
V
VF
FWD Forward Voltage
VIN = 0 V, IF = 30 A, TJ = 25°C
-
2.1
-
V
VIN = 0 V, IF = 30 A, TJ = 125°C
1.9
2.5
V
HS
tON
High Side Switching Times
VPN = 300 V, VCC = VBS = 15 V
IC = 50 A
VIN = 0
V ↔ 5V, Ls=55 nH,
Inductive Load
TJ= 25°C
(4 , 5)
-
0.73
-
μs
tC(ON)
-
0.12
-
tOFF
-
0.80
-
tC(OFF)
-
0.14
-
trr
-
0.10
-
tON
High Side Switching Times
VPN = 300 V, VCC = VBS = 15 V
IC = 50 A
VIN = 0
V ↔ 5V, Ls=55 nH,
Inductive Load
TJ= 125°C
(4, 5)
-
0.70
-
μs
tC(ON)
-
0.15
-
tOFF
-
0.87
-
tC(OFF)
-
0.19
-
trr
-
0.20
-
LS
tON
Low Side Switching Times
VPN = 300 V, VCC = VBS = 15 V
IC = 50 A
VIN = 0
V ↔ 5 V, Ls=55 nH,
Inductive Load
TJ= 25°C
(4, 5)
-
0.68
-
μs
tC(ON)
-
0.20
-
tOFF
-
0.86
-
tC(OFF)
-
0.19
-
trr
-
0.14
-
tON
Low Side Switching Times
VPN = 300 V, VCC = VBS = 15 V
IC = 50 A
VIN = 0
V ↔ 5 V, Ls=55 nH,
Inductive Load
TJ= 125°C
(4,5)
-
0.64
-
μs
tC(ON)
-
0.24
-
tOFF
-
0.88
-
tC(OFF)
-
0.23
-
trr
-
0.20
-
SCWT
Short Circuit withstand time
(6)
VCC = VBS = 15 V, VPN= 450 V,
TJ= 25°C, Non-repetitive
-
5
-
μs
ICES
Collector-Emitter Leakage
Current for IGBT and diode in
parallel
TJ= 25°C, VCE = 650 V
-
3
-
μA
TJ= 125°C, VCE = 650 V
-
150
1500
μA
Notes:
4.
tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching times
of IGBT itself under the given gate driving condition internally. Refer to Figure 6 for detailed information
5.
Stray inductance Ls is sum of stray inductance of module & setup
6.
Verified by design and bench-testing only



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