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ISL6566 bảng dữ liệu(PDF) 27 Page - Renesas Technology Corp

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nhà sản xuất  RENESAS [Renesas Technology Corp]
Trang chủ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL6566 bảng dữ liệu(HTML) 27 Page - Renesas Technology Corp

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ISL6566
FN9178 Rev 4.00
Page 27 of 30
Mar 9, 2006
Thermal Management
For maximum thermal performance in high current, high
switching frequency applications, connecting the thermal GND
pad of the ISL6566 to the ground plane with multiple vias is
recommended. This heat spreading allows the part to achieve
its full thermal potential. It is also recommended that the
controller be placed in a direct path of airflow if possible to help
thermally manage the part.
Suppressing MOSFET Gate Leakage
With VCC at ground potential, UGATE is high impedance. In
this state, any stray leakage has the potential to deliver charge
to the gate of the upper MOSFET. If UGATE receives sufficient
charge to bias the device on, a low impedance path will be
connected between the upper MOSFET drain and PHASE. If
this occurs and the input power supply is present and active,
the system could see potentially damaging current. Worst-case
leakage currents are on the order of pico-amps; therefore, a
10k
 resistor, connected from UGATE to PHASE, is more than
sufficient to bleed off any stray leakage current. This resistor
will not affect the normal performance of the driver or reduce its
efficiency.



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