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S29CD032G bảng dữ liệu(PDF) 88 Page - SPANSION |
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S29CD032G bảng dữ liệu(HTML) 88 Page - SPANSION |
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88 / 93 page ![]() 88 S29CD032G 30606B0 March 22, 2004 Ad va n c e In f o rm a t i o n Erase and Programming Performance Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 2.5 V VCC, 100K cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 145°C, VCC = 2.5 V, 1M cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables 19 and 20 for further information on command definitions. 6. PPBs have a program/erase cycle endurance of 100 cycles. Latchup Characteristics Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. PQFP and Fortified BGA Pin Capacitance Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 1.0 5 s Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 23 230 s Double Word Program Time 18 250 µs Excludes system level overhead (Note 5) Accelerated Double Word Program Time 8 130 µs Accelerated Chip Program Time 5 50 s Chip Program Time (Note 3) x32 12 120 s Description Min Max Input voltage with respect to VSS on all pins except I/O pins (including A9, ACC, and WP#) –1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V VCC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF |
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