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STQ2HNK60ZR-AP bảng dữ liệu(PDF) 3 Page - STMicroelectronics

tên linh kiện STQ2HNK60ZR-AP
Giải thích chi tiết về linh kiện  N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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STQ2HNK60ZR-AP bảng dữ liệu(HTML) 3 Page - STMicroelectronics

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STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =1mA,VGS = 0
600
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating,TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID =50 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID = 1.0 A
4.4
4.8
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =15V, ID = 1.0 A
1.5
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS = 0
280
38
7
pF
pF
pF
Coss eq. (3)
Equivalent Output
Capacitance
VGS =0V, VDS = 0V to 480V
30
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =300 V, ID =1.0 A
RG =4.7Ω VGS =10 V
(Resistive Load see, Figure 3)
10
30
23
50
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =480V, ID =2.0 A,
VGS =10V
11
2.25
6
15
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
2.0
8.0
A
A
VSD (1)
ForwardOnVoltage
ISD =2.0 A, VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2.0 A, di/dt = 100 A/µs
VDD =20 V,Tj =25°C
(see test circuit, Figure 5)
178
445
5
ns
nC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =13A,di/dt =100 A/µs
VDD =20 V,Tj = 150°C
(see test circuit, Figure 5)
200
500
5
ns
nC
A



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