HCBC558 datasheet(3/6 Pages) HOTTECH

3 / 6 page

HCBC556/HCBC557/HCBC558(PNP)

GENERAL PURPOSE TRANSISTOR

Typical

Characteristics

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

3 / 6

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

–0.2

0.2

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

–0.6

–0.7

–0.8

–0.9

–1.0

–0.5

–0.2

–0.4

–0.1

–0.3

1.6

1.2

2.0

2.8

2.4

–1.2

–1.6

–2.0

–0.02

–1.0

–10

–20

–0.1

–0.4

–0.8

1.5

1.0

0.7

0.5

0.3

–0.2

–10

–100

–1.0

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = –10 V

VCE = –10 V

TA = 25°C

–55

°C to +125°C

IC = –100 mA

IC = –20 mA

–0.5 –1.0

–2.0

–5.0 –10

–20

–50

–100 –200

–0.1 –0.2

–0.5

–1.0

–2.0

–5.0

–10

–20

–50

–100

IC = –200 mA

IC = –50 mA

IC =

–10 mA

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Current–Gain – Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

–0.4

1.0

100

200

300

400

7.0

5.0

3.0

2.0

–0.5

TA = 25°C

Cob

Cib

–0.6

–1.0

–2.0

–4.0 –6.0

–10

–20 –30 –40

150

–1.0

–2.0 –3.0

–5.0

–10

–20

–30

–50

VCE = –10 V

TA = 25°C

1.0

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